MTED6N25KJ3 Specs and Replacement

Type Designator: MTED6N25KJ3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.422 Ohm

Package: TO-252

MTED6N25KJ3 substitution

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MTED6N25KJ3 datasheet

 ..1. Size:301K  cystek
 mted6n25kj3.pdf pdf_icon

MTED6N25KJ3

Spec. No. C936J3 Issued Date 2013.12.09 CYStech Electronics Corp. Revised Date Page No. 1/9 lN-Channel Enhancement Mode Power MOSFET BVDSS 250V MTED6N25KJ3 ID @ VGS=10V 8A 422m VGS=10V, ID=5A RDSON(TYP) 399m VGS=6V, ID=3A Features ESD protected Low Gate Charge Fast Switching Characteristic Simple Drive Requirement Pb-free lead ... See More ⇒

 6.1. Size:310K  cystek
 mted6n25j3.pdf pdf_icon

MTED6N25KJ3

Spec. No. C894J3 Issued Date 2013.03.11 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 250V MTED6N25J3 ID 8A 435m VGS=10V, ID=5A RDSON(TYP) 410m VGS=6V, ID=3A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Out... See More ⇒

Detailed specifications: MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3, MTED6N25J3, 60N06, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3, MTEF1P15N6, MTEF1P15Q8, MTEF1P15V8, MTEH0N25J3, MTEJ0P20J3

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