All MOSFET. MTEE2N20FP Datasheet

 

MTEE2N20FP MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTEE2N20FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm
   Package: TO-220FP

 MTEE2N20FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTEE2N20FP Datasheet (PDF)

 ..1. Size:342K  cystek
 mtee2n20fp.pdf

MTEE2N20FP MTEE2N20FP

Spec. No. : C881FP Issued Date : 2012.11.20 CYStech Electronics Corp.Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 200VMTEE2N20FP ID 4ARDS(ON)@VGS=10V, ID=2.9A 650 m(typ) RDS(ON)@VGS=7V, ID=1A 590 m(typ) Description The MTEE2N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of f

 6.1. Size:308K  cystek
 mtee2n20j3.pdf

MTEE2N20FP MTEE2N20FP

Spec. No. : C881J3 Issued Date : 2012.12.14 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 200VMTEE2N20J3 ID 4.5ARDS(ON)@VGS=10V, ID=2.9A 650 m(typ) RDS(ON)@VGS=7V, ID=1A 590 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2705

 

 
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