MTEF1P15N6 Specs and Replacement

Type Designator: MTEF1P15N6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.661 Ohm

Package: SOT-26

MTEF1P15N6 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTEF1P15N6 datasheet

 ..1. Size:352K  cystek
 mtef1p15n6.pdf pdf_icon

MTEF1P15N6

Spec. No. C896N6 Issued Date 2013.02.21 CYStech Electronics Corp. Revised Date 2013.11.11 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET MTEF1P15N6 Description The MTEF1P15N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 p... See More ⇒

 6.1. Size:690K  1
 mtef1p15av8.pdf pdf_icon

MTEF1P15N6

Spec. No. C896V8 Issued Date 2015.12.16 CYStech Electronics Corp. Revised Date 2018.07.24 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25 C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56 @ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb... See More ⇒

 6.2. Size:690K  cystek
 mtef1p15av8.pdf pdf_icon

MTEF1P15N6

Spec. No. C896V8 Issued Date 2015.12.16 CYStech Electronics Corp. Revised Date 2018.07.24 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25 C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56 @ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb... See More ⇒

 6.3. Size:374K  cystek
 mtef1p15v8.pdf pdf_icon

MTEF1P15N6

Spec. No. C896V8 Issued Date 2014.05.05 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15V8 ID -4A @ VGS=-10V, TC=25 C 0.64 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.7 @ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating a... See More ⇒

SHOW MORE

Detailed specifications: MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3, IRFZ44N, MTEF1P15Q8, MTEF1P15V8, MTEH0N25J3, MTEJ0P20J3, MTEJ0P20L3, MTF50P02J3, MTN003N02Y3, MTN003N03S3

Keywords - MTEF1P15N6 MOSFET specs

 MTEF1P15N6 cross reference

 MTEF1P15N6 equivalent finder

 MTEF1P15N6 pdf lookup

 MTEF1P15N6 substitution

 MTEF1P15N6 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.