All MOSFET. MTEF1P15Q8 Datasheet

 

MTEF1P15Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTEF1P15Q8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOP-8

 MTEF1P15Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTEF1P15Q8 Datasheet (PDF)

 ..1. Size:633K  cystek
 mtef1p15q8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896Q8 Issued Date : 2013.07.05 CYStech Electronics Corp. Revised Date : 2018.10.24 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15Q8 ID@TA=25 C, VGS=-10V -1.6A RDSON@VGS=-10V, ID=-1.6A 650m(typ) RDSON@VGS=-6V, ID=-1A 700m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb

 6.1. Size:690K  1
 mtef1p15av8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896V8 Issued Date : 2015.12.16 CYStech Electronics Corp. Revised Date : 2018.07.24 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56@ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb

 6.2. Size:690K  cystek
 mtef1p15av8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896V8 Issued Date : 2015.12.16 CYStech Electronics Corp. Revised Date : 2018.07.24 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56@ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb

 6.3. Size:374K  cystek
 mtef1p15v8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896V8 Issued Date : 2014.05.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150VMTEF1P15V8 ID -4A @ VGS=-10V, TC=25C 0.64 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.7@ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating a

 6.4. Size:283K  cystek
 mtef1p15l3.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896L3 Issued Date : 2013.04.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTEF1P15L3 BVDSS -150VID -1.4A0.64 (typ) RDSON@VGS=-10V, ID=-1.4A 0.7 (typ) RDSON@VGS=-6V, ID=-2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equi

 6.5. Size:352K  cystek
 mtef1p15n6.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896N6 Issued Date : 2013.02.21 CYStech Electronics Corp.Revised Date : 2013.11.11 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTEF1P15N6 Description The MTEF1P15N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 p

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History: CHM72A3PAGP

 

 
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