Справочник MOSFET. MTEF1P15Q8

 

MTEF1P15Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTEF1P15Q8
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 28 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для MTEF1P15Q8

 

 

MTEF1P15Q8 Datasheet (PDF)

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 mtef1p15q8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896Q8 Issued Date : 2013.07.05 CYStech Electronics Corp. Revised Date : 2018.10.24 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15Q8 ID@TA=25 C, VGS=-10V -1.6A RDSON@VGS=-10V, ID=-1.6A 650m(typ) RDSON@VGS=-6V, ID=-1A 700m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb

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 mtef1p15av8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896V8 Issued Date : 2015.12.16 CYStech Electronics Corp. Revised Date : 2018.07.24 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56@ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb

 6.2. Size:690K  cystek
 mtef1p15av8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896V8 Issued Date : 2015.12.16 CYStech Electronics Corp. Revised Date : 2018.07.24 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56@ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb

 6.3. Size:374K  cystek
 mtef1p15v8.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896V8 Issued Date : 2014.05.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150VMTEF1P15V8 ID -4A @ VGS=-10V, TC=25C 0.64 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.7@ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating a

 6.4. Size:283K  cystek
 mtef1p15l3.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896L3 Issued Date : 2013.04.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTEF1P15L3 BVDSS -150VID -1.4A0.64 (typ) RDSON@VGS=-10V, ID=-1.4A 0.7 (typ) RDSON@VGS=-6V, ID=-2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equi

 6.5. Size:352K  cystek
 mtef1p15n6.pdf

MTEF1P15Q8 MTEF1P15Q8

Spec. No. : C896N6 Issued Date : 2013.02.21 CYStech Electronics Corp.Revised Date : 2013.11.11 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTEF1P15N6 Description The MTEF1P15N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 p

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