MTEH0N25J3 Specs and Replacement

Type Designator: MTEH0N25J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm

Package: TO-252

MTEH0N25J3 substitution

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MTEH0N25J3 datasheet

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 mteh0n25j3.pdf pdf_icon

MTEH0N25J3

Spec. No. C895J3 Issued Date 2014.04.23 CYStech Electronics Corp. Revised Date 2014.04.28 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 250V MTEH0N25J3 ID@VGS=10V 3.5A VGS=10V, ID=3A 720m RDSON(TYP) VGS=6V, ID=2A 720m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circ... See More ⇒

Detailed specifications: MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3, MTEF1P15N6, MTEF1P15Q8, MTEF1P15V8, IRF840, MTEJ0P20J3, MTEJ0P20L3, MTF50P02J3, MTN003N02Y3, MTN003N03S3, MTN0401LA3, MTN0410L3, MTN04N03F3

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.