All MOSFET. MTEH0N25J3 Datasheet

 

MTEH0N25J3 Datasheet and Replacement


   Type Designator: MTEH0N25J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO-252
 

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MTEH0N25J3 Datasheet (PDF)

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MTEH0N25J3

Spec. No. : C895J3 Issued Date : 2014.04.23 CYStech Electronics Corp.Revised Date : 2014.04.28 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 250VMTEH0N25J3 ID@VGS=10V 3.5AVGS=10V, ID=3A 720m RDSON(TYP) VGS=6V, ID=2A 720m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circ

Datasheet: MTED6N25J3 , MTED6N25KJ3 , MTEE2N20FP , MTEE2N20J3 , MTEF1P15L3 , MTEF1P15N6 , MTEF1P15Q8 , MTEF1P15V8 , IRF840 , MTEJ0P20J3 , MTEJ0P20L3 , MTF50P02J3 , MTN003N02Y3 , MTN003N03S3 , MTN0401LA3 , MTN0410L3 , MTN04N03F3 .

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