MTF50P02J3 Specs and Replacement
Type Designator: MTF50P02J3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 102 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: TO-252
MTF50P02J3 substitution
MTF50P02J3 datasheet
mtf50p02j3.pdf
Spec. No. C784J3 Issued Date 2011.04.06 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -20V MTF50P02J3 ID -10A 58m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTF50P02J3 TO-252 G Gate D Drain ... See More ⇒
Detailed specifications: MTEE2N20J3 , MTEF1P15L3 , MTEF1P15N6 , MTEF1P15Q8 , MTEF1P15V8 , MTEH0N25J3 , MTEJ0P20J3 , MTEJ0P20L3 , IRF540 , MTN003N02Y3 , MTN003N03S3 , MTN0401LA3 , MTN0410L3 , MTN04N03F3 , MTN1012C3 , MTN1012ZC3 , MTN10N40E3 .
History: DH100P30 | AGM042N10D
Keywords - MTF50P02J3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DH100P30 | AGM042N10D
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