All MOSFET. MTN003N02Y3 Datasheet

 

MTN003N02Y3 Datasheet and Replacement


   Type Designator: MTN003N02Y3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id| ⓘ - Maximum Drain Current: 0.56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 0.76 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: SOT-723
 

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MTN003N02Y3 Datasheet (PDF)

 ..1. Size:405K  cystek
 mtn003n02y3.pdf pdf_icon

MTN003N02Y3

Spec. No. : C814Y3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2018.04.17 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN003N02Y3 ID 560mARDSON@VGS=4V, ID=300mA 290m(typ) RDSON@VGS=2.5V,ID=300mA 440m(typ) RDSON@VGS=1.8V,ID=300mA 845m(typ) Features Simple drive requirement Small package outline ESD protected

 6.1. Size:313K  cystek
 mtn003n03s3.pdf pdf_icon

MTN003N02Y3

Spec. No. : C567S3 Issued Date : 2012.07.24 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN003N03S3 ID 530mARDSON@VGS=4.5V, ID=300mA 0.44(typ) RDSON@VGS=4V, ID=300mA 0.48(typ) RDSON@VGS=2.5V, ID=300mA 1(typ) Features Simple drive requirement Small package outline Pb-free package

Datasheet: MTEF1P15L3 , MTEF1P15N6 , MTEF1P15Q8 , MTEF1P15V8 , MTEH0N25J3 , MTEJ0P20J3 , MTEJ0P20L3 , MTF50P02J3 , 50N06 , MTN003N03S3 , MTN0401LA3 , MTN0410L3 , MTN04N03F3 , MTN1012C3 , MTN1012ZC3 , MTN10N40E3 , MTN10N60E3 .

Keywords - MTN003N02Y3 MOSFET datasheet

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