MTN003N03S3 Specs and Replacement

Type Designator: MTN003N03S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: SOT-323

MTN003N03S3 substitution

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MTN003N03S3 datasheet

 ..1. Size:313K  cystek
 mtn003n03s3.pdf pdf_icon

MTN003N03S3

Spec. No. C567S3 Issued Date 2012.07.24 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN003N03S3 ID 530mA RDSON@VGS=4.5V, ID=300mA 0.44 (typ) RDSON@VGS=4V, ID=300mA 0.48 (typ) RDSON@VGS=2.5V, ID=300mA 1 (typ) Features Simple drive requirement Small package outline Pb-free package... See More ⇒

 6.1. Size:405K  cystek
 mtn003n02y3.pdf pdf_icon

MTN003N03S3

Spec. No. C814Y3 Issued Date 2012.05.15 CYStech Electronics Corp. Revised Date 2018.04.17 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN003N02Y3 ID 560mA RDSON@VGS=4V, ID=300mA 290m (typ) RDSON@VGS=2.5V,ID=300mA 440m (typ) RDSON@VGS=1.8V,ID=300mA 845m (typ) Features Simple drive requirement Small package outline ESD protected ... See More ⇒

Detailed specifications: MTEF1P15N6, MTEF1P15Q8, MTEF1P15V8, MTEH0N25J3, MTEJ0P20J3, MTEJ0P20L3, MTF50P02J3, MTN003N02Y3, IRFP460, MTN0401LA3, MTN0410L3, MTN04N03F3, MTN1012C3, MTN1012ZC3, MTN10N40E3, MTN10N60E3, MTN10N60FP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.