All MOSFET. MTN0401LA3 Datasheet

 

MTN0401LA3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN0401LA3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.64 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-92

 MTN0401LA3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN0401LA3 Datasheet (PDF)

 ..1. Size:166K  cystek
 mtn0401la3.pdf

MTN0401LA3 MTN0401LA3

Spec. No. : C403A3 Issued Date : 2006.07.14 CYStech Electronics Corp.Revised Date : 2006.08.14 Page No. : 1/6 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel

 9.1. Size:446K  cystek
 mtn0410l3.pdf

MTN0401LA3 MTN0401LA3

Spec. No. : C792L3 Issued Date : 2010.07.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100VMTN0410L3 ID 3A280m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTN0410L3 SOT-223 D S D GGate DDrain G

 9.2. Size:370K  cystek
 mtn04n03f3.pdf

MTN0401LA3 MTN0401LA3

Spec. No. : C807F3 Issued Date : 2009.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25VID 80AMTN04N03F3 RDSON 4m Features Low On-resistance Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-263 MTN04N03F3

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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