MTN0410L3 Specs and Replacement

Type Designator: MTN0410L3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.4 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-223

MTN0410L3 substitution

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MTN0410L3 datasheet

 ..1. Size:446K  cystek
 mtn0410l3.pdf pdf_icon

MTN0410L3

Spec. No. C792L3 Issued Date 2010.07.16 CYStech Electronics Corp. Revised Date Page No. 1/7 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100V MTN0410L3 ID 3A 280m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTN0410L3 SOT-223 D S D G Gate D Drain G ... See More ⇒

 9.1. Size:370K  cystek
 mtn04n03f3.pdf pdf_icon

MTN0410L3

Spec. No. C807F3 Issued Date 2009.12.02 CYStech Electronics Corp. Revised Date Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25V ID 80A MTN04N03F3 RDSON 4m Features Low On-resistance Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-263 MTN04N03F3... See More ⇒

 9.2. Size:166K  cystek
 mtn0401la3.pdf pdf_icon

MTN0410L3

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Detailed specifications: MTEF1P15V8, MTEH0N25J3, MTEJ0P20J3, MTEJ0P20L3, MTF50P02J3, MTN003N02Y3, MTN003N03S3, MTN0401LA3, IRF640, MTN04N03F3, MTN1012C3, MTN1012ZC3, MTN10N40E3, MTN10N60E3, MTN10N60FP, MTN10N65EA, MTN10N65FP

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