FSJ9160D Specs and Replacement
Type Designator: FSJ9160D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO254AA
FSJ9160D substitution
FSJ9160D datasheet
fsj9160.pdf
FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 44A, -100V, rDS(ON) = 0.055 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity t... See More ⇒
Detailed specifications: FSJ055D , FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R , FSJ264D , FSJ264R , IRLZ44N , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , FSL110R , FSL130D , FSL130R , FSL13AOD .
History: FSJ264D
Keywords - FSJ9160D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
