MTN14N60FP Specs and Replacement

Type Designator: MTN14N60FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-220FP

MTN14N60FP substitution

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MTN14N60FP datasheet

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MTN14N60FP

Spec. No. C715FP Issued Date 2009.09.16 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.55 (max.) MTN14N60FP ID 14A Description The MTN14N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

Detailed specifications: MTN12N60FP, MTN12N65FP, MTN1308E3, MTN1322S3, MTN138KS3, MTN138ZN3, MTN13N50E3, MTN13N50FP, 2SK3878, MTN15N50E3, MTN15N50F3, MTN15N50FP, MTN1634V8, MTN18N20FP, MTN1N60A3, MTN1N65I3, MTN2002ZS3

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