All MOSFET. MTN1634V8 Datasheet

 

MTN1634V8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN1634V8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: DFN3X3

 MTN1634V8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN1634V8 Datasheet (PDF)

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 mtn1634v8.pdf

MTN1634V8 MTN1634V8

Spec. No. : C910V8 Issued Date : 2013.04.11 CYStech Electronics Corp.Revised Date : 2014.04.21 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 25VMTN1634V8ID 60AVGS=10V, ID=20A 3.4m VGS=4.5V, ID=20A 3.7m RDSON(TYP) VGS=2.5V, ID=20A 4.6m VGS=1.5V, ID=10A 14.2m Features Single Drive Requirement Low On-resistance Fast

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