MTN18N20FP Specs and Replacement

Type Designator: MTN18N20FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO-220FP

MTN18N20FP substitution

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MTN18N20FP datasheet

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MTN18N20FP

Spec. No. C840FP Issued Date 2012.03.30 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V RDSON(TYP) 80m MTN18N20FP ID 18A Description The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a... See More ⇒

Detailed specifications: MTN138ZN3, MTN13N50E3, MTN13N50FP, MTN14N60FP, MTN15N50E3, MTN15N50F3, MTN15N50FP, MTN1634V8, IRLB4132, MTN1N60A3, MTN1N65I3, MTN2002ZS3, MTN2002ZW3, MTN20N20F3, MTN20NF06J3, MTN22N20J3, MTN2300N3

Keywords - MTN18N20FP MOSFET specs

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