MTN22N20J3 Specs and Replacement

Type Designator: MTN22N20J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V

Qg ⓘ - Total Gate Charge: 34 nC

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: TO-252

MTN22N20J3 substitution

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MTN22N20J3 datasheet

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 mtn22n20j3.pdf pdf_icon

MTN22N20J3

Spec. No. C840J3 Issued Date 2012.07.02 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTN22N20J3 ID 22A 86m VGS=10V, ID=11A RDSON(TYP) 93m VGS=4.5V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit ... See More ⇒

Detailed specifications: MTN1634V8, MTN18N20FP, MTN1N60A3, MTN1N65I3, MTN2002ZS3, MTN2002ZW3, MTN20N20F3, MTN20NF06J3, K4145, MTN2300N3, MTN2302N3, MTN2302V3, MTN2304M3, MTN2304N3, MTN2306AM3, MTN2306AN3, MTN2306N3

Keywords - MTN22N20J3 MOSFET specs

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