FSJ9260R MOSFET. Datasheet pdf. Equivalent
Type Designator: FSJ9260R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO254AA
FSJ9260R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSJ9260R Datasheet (PDF)
fsj9260.pdf
FSJ9260D,FSJ9260R27A, -200V, 0.130 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 27A, -200V, rDS(ON) = 0.130 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity t
Datasheet: FSJ160R , FSJ260D , FSJ260R , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , IRF3710 , FSL110D , FSL110R , FSL130D , FSL130R , FSL13AOD , FSL13AOR , FSL230D , FSL230R .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918