MTN2310M3 Datasheet and Replacement

Spec. No. : C393M3 Issued Date : 2007.05.28 CYStech Electronics Corp.Revised Date : 2015.09.02 Page No. : 1/9 60V N-Channel Enhancement Mode MOSFET BVDSS 60VMTN2310M3 ID@VGS=10V, TA=25C 4.8A RDSON@VGS=10V, ID=4A 41m(typ) RDSON@VGS=5V, ID=3A 46m(typ) Features Simple drive requirement Small package outline Pb-free lead plating package Symbol Outline

Spec. No. : C393V8 Issued Date : 2013.06.13 CYStech Electronics Corp.Revised Date : 2013.06.24 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTN2310V8ID 14A31m VGS=10V, ID=3A RDSON(TYP) 35m VGS=4.5V, ID=2A Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

Spec. No. : C393N3 CYStech Electronics Corp. Issued Date : 2007.11.26 Revised Date :2013.12.30 Page No. : 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60VMTN2310N3 ID 4ARDSON@VGS=10V, ID=4A 41m(typ) RDSON@VGS=5V, ID=3A 46m(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MT

Spec. No. : C323N3 Issued Date : 2004.04.05 CYStech Electronics Corp.Revised Date :2012.06.26 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2302N3 ID 3.6A29m(typ.)RDSON(MAX)@VGS=4.5V, ID=3.6A 39m(typ.)RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le

Spec. No. : C737N3 Issued Date : 2011.11.24 CYStech Electronics Corp.Revised Date : 2012.02.10 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304N3 ID 5A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN

Spec. No. : C429N3 Issued Date : 2008.08.14 CYStech Electronics Corp.Revised Date :2012.03.29 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2306AN3 ID 5.5A25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities

Spec. No. : C582N3 Issued Date : 2011.08.30 CYStech Electronics Corp.Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20VMTN2306ZN3 ID 6A28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DSVGS=2.5V, ID=2.6A@V =4.5V, I =5A R =30m GS DDS(ON)60m VGS=1.8V, ID=1A @V =2.5V, I =2.6

Spec. No. : C323V3 Issued Date : 2009.01.19 CYStech Electronics Corp.Revised Date : 2010.06.18 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive

Spec. No. : C737M3 Issued Date : 2012.07.26 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304M3 ID 6A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-fre

Spec. No. : C583N3 Issued Date : 2011.05.18 CYStech Electronics Corp.Revised Date : 2013.11.22 Page No. : 1/ 8 100V N-Channel Enhancement Mode MOSFET BVDSS 100VMTN2328N3 ID 1.9A125m RDSON(TYP) Features V =100V DS@V =10V, I =1.5A R =125m GS DDS(ON)(typ) Low on-resistance Low gate charge Excellent thermal and electrical capabilities

Spec. No. : C413N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2015.11.12 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2300N3 ID @VGS=4.5V, TA=25C 6.3A 23m(typ.) RDSON@VGS=4.5V, ID=6A 30m(typ.) RDSON@VGS=2.5V, ID=5.2A 64m(typ.) RDSON@VGS=1.5V, ID=500mA Features Low on-resistance Capable of 2.5V gate dr

Spec. No. : C583M3 Issued Date : 2012.01.12 CYStech Electronics Corp.Revised Date : 2013.08.11 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 100VID 3ARDSON@VGS=10V, ID=3A 130m(typ) MTN2328M3 RDSON@VGS=4.5V, ID=3A 136m(typ) Description The MTN2328M3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive

Spec. No. : C414M3 Issued Date : 2012.03.29 CYStech Electronics Corp.Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 30VID 6.8ARDSON@VGS=10V, ID=5.8A 25m(typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m(typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h

Spec. No. : C723N3 Issued Date : 2012.04.12 CYStech Electronics Corp.Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30VID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT

Spec. No. : C323N3 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20VMTN2300AN3 ID@VGS=4.5V, TA=25C 3.6A 29m(typ.) RDSON@VGS=4.5V, ID=3.6A 39m(typ.) RDSON@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-fr

Spec. No. : C710N3 Issued Date : 2013.12.18 CYStech Electronics Corp.Revised Date : Page No. : 1/ 9 16V N-Channel Enhancement Mode MOSFET BVDSS 16VMTN2342N3 ID @VGS=4.5V 6AVGS=4.5V, ID=7.2A 15.4m VGS=2.5V, ID=6.7A 17.2m VGS=1.8V, ID=6.4A RDSON(TYP) 19.8m VGS=1.5V, ID=5.5A 22.5m Features VGS=1.2V, ID=1.3A 26.7m Low on-resistance Low voltage ga