All MOSFET. MTN2510E3 Datasheet

 

MTN2510E3 Datasheet and Replacement


   Type Designator: MTN2510E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 236 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-220AB
 

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MTN2510E3 Datasheet (PDF)

 ..1. Size:269K  cystek
 mtn2510e3.pdf pdf_icon

MTN2510E3

Spec. No. : C433E3 Issued Date : 2010.07.15 CYStech Electronics Corp.Revised Date : 2013.04.29 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510E3 ID 50A17m RDSON(TYP) @ VGS=10V, ID=30A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package S

 7.1. Size:302K  cystek
 mtn2510le3.pdf pdf_icon

MTN2510E3

Spec. No. : C741E3 Issued Date : 2012.03.07 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN2510LE3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-220 MTN2510

 7.2. Size:283K  cystek
 mtn2510lj3.pdf pdf_icon

MTN2510E3

Spec. No. : C741J3 Issued Date : 2009.09.21 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510LJ3 ID 50A19m VGS=10V, ID=30A RDSON(TYP) 20m VGS=5V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic P

 7.3. Size:402K  cystek
 mtn2510h8.pdf pdf_icon

MTN2510E3

Spec. No. : C741H8 Issued Date : 2013.07.04 CYStech Electronics Corp.Revised Date : 2013.09.14 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510H8ID 55A17m VGS=10V, ID=30A RDSON(TYP) 21m VGS=6V, ID=20A Description The MTN2510H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching,

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Datasheet: MTN2306N3 , MTN2306ZN3 , MTN2310M3 , MTN2310N3 , MTN2310V8 , MTN2328M3 , MTN2328N3 , MTN2342N3 , 18N50 , MTN2510F3 , MTN2510H8 , MTN2510J3 , MTN2510LE3 , MTN2510LJ3 , MTN2572F3 , MTN2572FP , MTN2572H8 .

History: PF5G3EA | DHF85N08 | CSD19534KCS | 2SK4202-S19-AY | PM5Q2EA | PKCD0BB | BRCS070P03YM

Keywords - MTN2510E3 MOSFET datasheet

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