MTN2510E3 - параметры транзистора MOSFET, его аналоги, datasheet

MTN2510E3 Datasheet (PDF)

..1. Size:269K cystek
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Spec. No. : C433E3 Issued Date : 2010.07.15 CYStech Electronics Corp.Revised Date : 2013.04.29 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510E3 ID 50A17m RDSON(TYP) @ VGS=10V, ID=30A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package S

7.1. Size:302K cystek
mtn2510le3.pdf pdf_icon

Spec. No. : C741E3 Issued Date : 2012.03.07 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN2510LE3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-220 MTN2510

7.2. Size:283K cystek
mtn2510lj3.pdf pdf_icon

Spec. No. : C741J3 Issued Date : 2009.09.21 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510LJ3 ID 50A19m VGS=10V, ID=30A RDSON(TYP) 20m VGS=5V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic P

7.3. Size:402K cystek
mtn2510h8.pdf pdf_icon

Spec. No. : C741H8 Issued Date : 2013.07.04 CYStech Electronics Corp.Revised Date : 2013.09.14 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510H8ID 55A17m VGS=10V, ID=30A RDSON(TYP) 21m VGS=6V, ID=20A Description The MTN2510H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching,