All MOSFET. MTN2604G6 Datasheet

 

MTN2604G6 Datasheet and Replacement


   Type Designator: MTN2604G6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TSOP-6
 

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MTN2604G6 Datasheet (PDF)

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MTN2604G6

Spec. No. : C737G6 Issued Date : 2009.03.16 CYStech Electronics Corp.Revised Date : 2012.11.21 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTN2604G6 ID 7ARDSON@VGS=10V, ID=7A 19m(typ.)RDSON@VGS=4.5V, ID=5A 26m(typ.)Description The MTN2604G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi

Datasheet: MTN2510H8 , MTN2510J3 , MTN2510LE3 , MTN2510LJ3 , MTN2572F3 , MTN2572FP , MTN2572H8 , MTN2572J3 , 75N75 , MTN2N60FP , MTN2N60I3 , MTN2N60J3 , MTN2N65AI3 , MTN2N65FP , MTN2N65I3 , MTN2N65J3 , MTN2N70FP .

History: MTN3055J3 | NTHLD040N65S3HF | MTN2310N3 | MTN2306ZN3 | PM5Q2EA | PKCD0BB | PF515BM

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