MTN2604G6 Specs and Replacement
Type Designator: MTN2604G6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TSOP-6
MTN2604G6 substitution
- MOSFET ⓘ Cross-Reference Search
MTN2604G6 datasheet
mtn2604g6.pdf
Spec. No. C737G6 Issued Date 2009.03.16 CYStech Electronics Corp. Revised Date 2012.11.21 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTN2604G6 ID 7A RDSON@VGS=10V, ID=7A 19m (typ.) RDSON@VGS=4.5V, ID=5A 26m (typ.) Description The MTN2604G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi... See More ⇒
Detailed specifications: MTN2510H8, MTN2510J3, MTN2510LE3, MTN2510LJ3, MTN2572F3, MTN2572FP, MTN2572H8, MTN2572J3, 18N50, MTN2N60FP, MTN2N60I3, MTN2N60J3, MTN2N65AI3, MTN2N65FP, MTN2N65I3, MTN2N65J3, MTN2N70FP
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
