MTN2604G6 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN2604G6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 51 pF
Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm
Package: TSOP-6
MTN2604G6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN2604G6 Datasheet (PDF)
mtn2604g6.pdf
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Spec. No. : C737G6 Issued Date : 2009.03.16 CYStech Electronics Corp.Revised Date : 2012.11.21 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTN2604G6 ID 7ARDSON@VGS=10V, ID=7A 19m(typ.)RDSON@VGS=4.5V, ID=5A 26m(typ.)Description The MTN2604G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchi
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