FSL130D Specs and Replacement
Type Designator: FSL130D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO205AF
FSL130D substitution
FSL130D datasheet
fsl130.pdf
FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒
fsl13ao.pdf
FSL13AOD, S E M I C O N D U C T O R FSL13AOR Radiation Hardened, SEGR Resistant February 1998 N-Channel Power MOSFETs Features Description 9A, 100V, rDS(ON) = 0.180 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOSFET... See More ⇒
Detailed specifications: FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , FSL110R , IRF3710 , FSL130R , FSL13AOD , FSL13AOR , FSL230D , FSL230R , FSL234D , FSL234R , FSL23A4D .
History: JMSH0401PTS | JMSH0401PGQ
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