FSL130D Datasheet and Replacement
Type Designator: FSL130D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO205AF
FSL130D substitution
FSL130D Datasheet (PDF)
fsl130.pdf

FSL130D, FSL130R8A, 100V, 0.230 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
fsl13ao.pdf

FSL13AOD,S E M I C O N D U C T O RFSL13AORRadiation Hardened, SEGR ResistantFebruary 1998 N-Channel Power MOSFETsFeatures Description 9A, 100V, rDS(ON) = 0.180 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFET
Datasheet: FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , FSL110R , IRF630 , FSL130R , FSL13AOD , FSL13AOR , FSL230D , FSL230R , FSL234D , FSL234R , FSL23A4D .
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