MTN3607F3 Specs and Replacement

Type Designator: MTN3607F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 401 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: TO-263

MTN3607F3 substitution

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MTN3607F3 datasheet

 ..1. Size:334K  cystek
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MTN3607F3

Spec. No. C579F3 Issued Date 2011.10.21 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDS(ON) 7.8 m (typ.) MTN3607F3 ID 75A Description The MTN3607F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a... See More ⇒

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MTN3607F3

Spec. No. C579E3 Issued Date 2011.10.20 CYStech Electronics Corp. Revised Date 2013.12.20 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDS(ON) 7.8 m (typ.) MTN3607E3 ID 75A Description The MTN3607E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

Detailed specifications: MTN3418S3, MTN3434G6, MTN3440N6, MTN3484J3, MTN3484V8, MTN351AN3, MTN35N03J3, MTN3607E3, IRF3205, MTN3820F3, MTN3820J3, MTN3K01N3, MTN3N60FP, MTN3N60I3, MTN3N60J3, MTN3N65FP, MTN40N03I3

Keywords - MTN3607F3 MOSFET specs

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