MTN3820F3 Specs and Replacement

Type Designator: MTN3820F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 62.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm

Package: TO-263

MTN3820F3 substitution

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MTN3820F3 datasheet

 ..1. Size:335K  cystek
 mtn3820f3.pdf pdf_icon

MTN3820F3

Spec. No. C576F3 Issued Date 2011.11.19 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTN3820F3 ID 26A 64m VGS=10V, ID=18A Features RDSON(TYP) Low Gate Charge 65m VGS=4V, ID=10A Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli... See More ⇒

 7.1. Size:277K  cystek
 mtn3820j3.pdf pdf_icon

MTN3820F3

Spec. No. C576J3 Issued Date 2011.11.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3820J3 ID 24A 64m VGS=10V, ID=18A RDSON(TYP) 65m VGS=4V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline... See More ⇒

Detailed specifications: MTN3434G6, MTN3440N6, MTN3484J3, MTN3484V8, MTN351AN3, MTN35N03J3, MTN3607E3, MTN3607F3, IRF740, MTN3820J3, MTN3K01N3, MTN3N60FP, MTN3N60I3, MTN3N60J3, MTN3N65FP, MTN40N03I3, MTN40N03J3

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