All MOSFET. MTN3820F3 Datasheet

 

MTN3820F3 Datasheet and Replacement


   Type Designator: MTN3820F3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 62.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO-263
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MTN3820F3 Datasheet (PDF)

 ..1. Size:335K  cystek
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MTN3820F3

Spec. No. : C576F3 Issued Date : 2011.11.19 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN3820F3 ID 26A64m VGS=10V, ID=18A Features RDSON(TYP) Low Gate Charge 65m VGS=4V, ID=10A Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli

 7.1. Size:277K  cystek
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MTN3820F3

Spec. No. : C576J3 Issued Date : 2011.11.19 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTN3820J3 ID 24A64m VGS=10V, ID=18A RDSON(TYP) 65m VGS=4V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline

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History: CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | ALD1103DB | ZXM66P03N8 | TK7P65W

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