MTN3K01N3 Specs and Replacement

Type Designator: MTN3K01N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm

Package: SOT-23

MTN3K01N3 substitution

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MTN3K01N3 datasheet

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 mtn3k01n3.pdf pdf_icon

MTN3K01N3

Spec. No. C831N3 CYStech Electronics Corp. Issued Date 2012.07.04 Revised Date 2013.06.26 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3K01N3 ID 3.2A RDSON@VGS=4.5V, ID=2.5A 83m (typ) RDSON@VGS=2.5V,ID=2.5A 112m (typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Ou... See More ⇒

Detailed specifications: MTN3484J3, MTN3484V8, MTN351AN3, MTN35N03J3, MTN3607E3, MTN3607F3, MTN3820F3, MTN3820J3, 20N60, MTN3N60FP, MTN3N60I3, MTN3N60J3, MTN3N65FP, MTN40N03I3, MTN40N03J3, MTN4402Q8, MTN4410Q8

Keywords - MTN3K01N3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.