All MOSFET. MTN3K01N3 Datasheet

 

MTN3K01N3 Datasheet and Replacement


   Type Designator: MTN3K01N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
   Package: SOT-23
 

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MTN3K01N3 Datasheet (PDF)

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MTN3K01N3

Spec. No. : C831N3 CYStech Electronics Corp. Issued Date : 2012.07.04 Revised Date : 2013.06.26 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3K01N3 ID 3.2ARDSON@VGS=4.5V, ID=2.5A 83m(typ) RDSON@VGS=2.5V,ID=2.5A 112m(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Ou

Datasheet: MTN3484J3 , MTN3484V8 , MTN351AN3 , MTN35N03J3 , MTN3607E3 , MTN3607F3 , MTN3820F3 , MTN3820J3 , 20N60 , MTN3N60FP , MTN3N60I3 , MTN3N60J3 , MTN3N65FP , MTN40N03I3 , MTN40N03J3 , MTN4402Q8 , MTN4410Q8 .

History: MSD2N60 | IXTT140N10P | SSF2341E | STD35NF3LLT4 | G10N80BF | IRF6665 | SM2601PSC

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