All MOSFET. MTN40N03J3 Datasheet

 

MTN40N03J3 Datasheet and Replacement


   Type Designator: MTN40N03J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-252
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MTN40N03J3 Datasheet (PDF)

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MTN40N03J3

Spec. No. : C381J3 Issued Date : 2007.06.12 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VID 36AMTN40N03J3 RDSON 21m Features Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-25

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MTN40N03J3

Spec. No. : C745I3 Issued Date : 2009.10.16 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 30V RDS(ON) : 21m MTN40N03I3 ID : 36A Description The MTN40N03I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

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History: IRFBG20 | DMN2300UFB4 | DMP2104LP | TK2P60D | DMN60H3D5SK3

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