All MOSFET. MTN4800V8 Datasheet

 

MTN4800V8 Datasheet and Replacement


   Type Designator: MTN4800V8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN3X3
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MTN4800V8 Datasheet (PDF)

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MTN4800V8

Spec. No. : C737V8 Issued Date : 2011.12.30 CYStech Electronics Corp.Revised Date : 2013.11.13 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTN4800V8 ID 18AVGS=10V, ID=10A 14m RDSON(TYP) VGS=4.5V, ID=8A 22m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline D

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History: TK2P60D | IRFBG20

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