MTN4800V8 Specs and Replacement

Type Designator: MTN4800V8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN3X3

MTN4800V8 substitution

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MTN4800V8 datasheet

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 mtn4800v8.pdf pdf_icon

MTN4800V8

Spec. No. C737V8 Issued Date 2011.12.30 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTN4800V8 ID 18A VGS=10V, ID=10A 14m RDSON(TYP) VGS=4.5V, ID=8A 22m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline D... See More ⇒

Detailed specifications: MTN3N60J3, MTN3N65FP, MTN40N03I3, MTN40N03J3, MTN4402Q8, MTN4410Q8, MTN4410V8, MTN4424Q8, IRFP260N, MTN4N01Q8, MTN4N60AE3, MTN4N60AFP, MTN4N60E3, MTN4N60FP, MTN4N60I3, MTN4N60J3, MTN4N65FP

Keywords - MTN4800V8 MOSFET specs

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