All MOSFET. MTN5N50J3 Datasheet

 

MTN5N50J3 Datasheet and Replacement


   Type Designator: MTN5N50J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-252
 

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MTN5N50J3 Datasheet (PDF)

 ..1. Size:327K  cystek
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MTN5N50J3

Spec. No. : C740J3 Issued Date : 2010.06.30 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) max. : 1.6 MTN5N50J3 ID : 4.5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications

 7.1. Size:357K  cystek
mtn5n50fp.pdf pdf_icon

MTN5N50J3

Spec. No. : C740FP Issued Date : 2011.04.12 CYStech Electronics Corp.Revised Date : 2012.01.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) max. : 1.6 MTN5N50FP ID : 4.5A Description The MTN5N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.2. Size:329K  cystek
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MTN5N50J3

Spec. No. : C740I3 Issued Date : 2010.06.24 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) max. : 1.6 MTN5N50I3 ID : 4.5A Description The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.3. Size:299K  cystek
mtn5n50e3.pdf pdf_icon

MTN5N50J3

Spec. No. : C740E3 Issued Date : 2009.09.14 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 1.5 MTN5N50E3 ID : 4.5A Description The MTN5N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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