All MOSFET. MTN60NF06LJ3 Datasheet

 

MTN60NF06LJ3 Datasheet and Replacement


   Type Designator: MTN60NF06LJ3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 67 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252
 

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MTN60NF06LJ3 Datasheet (PDF)

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MTN60NF06LJ3

Spec. No. : C577J3 Issued Date : 2012.01.04 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60VMTN60NF06LJ3 ID 60ARDS(ON)@VGS=10V, ID=30A 10m(typ) RDS(ON)@VGS=4.5V, ID=20A 12m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS comp

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