MTN60NF06LJ3 Specs and Replacement

Type Designator: MTN60NF06LJ3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 146 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-252

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MTN60NF06LJ3 datasheet

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MTN60NF06LJ3

Spec. No. C577J3 Issued Date 2012.01.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTN60NF06LJ3 ID 60A RDS(ON)@VGS=10V, ID=30A 10m (typ) RDS(ON)@VGS=4.5V, ID=20A 12m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS comp... See More ⇒

Detailed specifications: MTN5N50FP, MTN5N50I3, MTN5N50J3, MTN5N60E3, MTN5N60FP, MTN5N60I3, MTN5N60J3, MTN5N65FP, IRFP260, MTN6515E3, MTN6515F3, MTN6515H8, MTN6515J3, MTN6680Q8, MTN6N65FP, MTN6N70FP, MTN7000A3

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