MTN6515J3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN6515J3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059
Ohm
Package:
TO-252
MTN6515J3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN6515J3
Datasheet (PDF)
..1. Size:264K cystek
mtn6515j3.pdf
Spec. No. : C739J3 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2014.07.07 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 150VMTN6515J3 ID 20ARDS(ON)@VGS=10V, ID=15A 60m(typ) RDS(ON)@VGS=5V, ID=10A 59m(typ) RDS(ON)@VGS=3V, ID=3A 60m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead
7.1. Size:283K cystek
mtn6515f3.pdf
Spec. No. : C739F3 Issued Date : 2012.06.20 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTN6515F3 ID 20ARDS(ON)@VGS=10V, ID=15A 66m(typ) RDS(ON)@VGS=5V, ID=10A 64m(typ) RDS(ON)@VGS=3V, ID=3A 66m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating pack
7.2. Size:234K cystek
mtn6515e3.pdf
Spec. No. : C739E3 Issued Date : 2009.10.19 CYStech Electronics Corp.Revised Date : 2010.10.18 Page No. : 1/6 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 150VMTN6515E3 ID 20A65m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating Equivalent Circuit Outline TO-220 MTN6515E3GGate DDrain SS
7.3. Size:357K cystek
mtn6515h8.pdf
Spec. No. : C739H8 Issued Date : 2009.12.09 CYStech Electronics Corp.Revised Date : 2010.06.28 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 150VMTN6515H8ID 20ARDSON(max) 65m Description The MTN6515H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
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