MTN6680Q8 Specs and Replacement

Type Designator: MTN6680Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP-8

MTN6680Q8 substitution

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MTN6680Q8 datasheet

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 mtn6680q8.pdf pdf_icon

MTN6680Q8

Spec. No. C383Q8 Issued Date 2007.06.14 CYStech Electronics Corp. Revised Date 2011.03.18 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET MTN6680Q8 Description The MTN6680Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack... See More ⇒

Detailed specifications: MTN5N60I3, MTN5N60J3, MTN5N65FP, MTN60NF06LJ3, MTN6515E3, MTN6515F3, MTN6515H8, MTN6515J3, 13N50, MTN6N65FP, MTN6N70FP, MTN7000A3, MTN7000ZA3, MTN7000ZHA3, MTN7002N3, MTN7002S3, MTN7002ZAS3

Keywords - MTN6680Q8 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.