All MOSFET. MTN6680Q8 Datasheet

 

MTN6680Q8 Datasheet and Replacement


   Type Designator: MTN6680Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP-8
 

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MTN6680Q8 Datasheet (PDF)

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MTN6680Q8

Spec. No. : C383Q8 Issued Date : 2007.06.14 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN6680Q8 Description The MTN6680Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

Datasheet: MTN5N60I3 , MTN5N60J3 , MTN5N65FP , MTN60NF06LJ3 , MTN6515E3 , MTN6515F3 , MTN6515H8 , MTN6515J3 , AO4407 , MTN6N65FP , MTN6N70FP , MTN7000A3 , MTN7000ZA3 , MTN7000ZHA3 , MTN7002N3 , MTN7002S3 , MTN7002ZAS3 .

History: CSD19533Q5A | GSM2519 | SQD100N03-3M4 | DH100P28I | BUK9K22-80E | FSS273 | CSD19531KCS

Keywords - MTN6680Q8 MOSFET datasheet

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