MTNN18N03Q8 Specs and Replacement

Type Designator: MTNN18N03Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2(0.4) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30(60) V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10(0.115) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 116(9.3) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012(3) Ohm

Package: SOP-8

MTNN18N03Q8 substitution

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MTNN18N03Q8 datasheet

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MTNN18N03Q8

Spec. No. C806Q8 Issued Date 2009.12.30 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/9 N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH 1 N-CH 2 MTNN18N03Q8 BVDSS 30V 60V ID 10A 0.115A RDSON(MAX) 18m 5 Description The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos... See More ⇒

Detailed specifications: MTNK3N3, MTNK3S3, MTNK3W3, MTNK3Y3, MTNK5C3, MTNK5N3, MTNK5S3, MTNK7S3, IRLB3034, MTNN20N03Q8, MTNN8451KQ8, MTNN8452KQ8, MTNN8453KQ8, MTP1013C3, MTP1013S3, MTP1067C6, MTP1406J3

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