All MOSFET. MTNN18N03Q8 Datasheet

 

MTNN18N03Q8 Datasheet and Replacement


   Type Designator: MTNN18N03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2(0.4) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30(60) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10(0.115) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 116(9.3) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012(3) Ohm
   Package: SOP-8
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MTNN18N03Q8 Datasheet (PDF)

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MTNN18N03Q8

Spec. No. : C806Q8 Issued Date : 2009.12.30 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/9 N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH 1 N-CH 2 MTNN18N03Q8 BVDSS 30V 60VID 10A 0.115ARDSON(MAX) 18m 5 Description The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDD4685F085

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