All MOSFET. MTNN20N03Q8 Datasheet

 

MTNN20N03Q8 Datasheet and Replacement


   Type Designator: MTNN20N03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2(0.4) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30(60) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8(0.115) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 116(9.3) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0155(3) Ohm
   Package: SOP-8
 

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MTNN20N03Q8 Datasheet (PDF)

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MTNN20N03Q8

Spec. No. : C805Q8 Issued Date : 2009.12.30 CYStech Electronics Corp.Revised Date :2011.03.21 Page No. : 1/9 N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH 1 N-CH 2 MTNN20N03Q8 BVDSS 30V 60VID 8A 0.115ARDSON(MAX) 20m 5 Description The MTNN20N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

Datasheet: MTNK3S3 , MTNK3W3 , MTNK3Y3 , MTNK5C3 , MTNK5N3 , MTNK5S3 , MTNK7S3 , MTNN18N03Q8 , AON7403 , MTNN8451KQ8 , MTNN8452KQ8 , MTNN8453KQ8 , MTP1013C3 , MTP1013S3 , MTP1067C6 , MTP1406J3 , MTP1406L3 .

History: MTP3P25 | IXFT80N10 | IXTH30N25 | GP2M002A060XG | DAMH300N150 | IPP65R280E6 | MSD4N60

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