All MOSFET. MTNN20N03Q8 Datasheet

 

MTNN20N03Q8 Datasheet and Replacement


   Type Designator: MTNN20N03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2(0.4) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30(60) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8(0.115) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 116(9.3) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155(3) Ohm
   Package: SOP-8
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MTNN20N03Q8 Datasheet (PDF)

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MTNN20N03Q8

Spec. No. : C805Q8 Issued Date : 2009.12.30 CYStech Electronics Corp.Revised Date :2011.03.21 Page No. : 1/9 N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH 1 N-CH 2 MTNN20N03Q8 BVDSS 30V 60VID 8A 0.115ARDSON(MAX) 20m 5 Description The MTNN20N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APM4810K | DMNH10H028SCT | WML11N80M3 | JCS4N60VB | NP22N055ILE | NTD4860N-1G | IRLS4030

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