MTNN8452KQ8 Specs and Replacement
Type Designator: MTNN8452KQ8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2(2) W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8(10.2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 124(149) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP-8
MTNN8452KQ8 substitution
- MOSFET ⓘ Cross-Reference Search
MTNN8452KQ8 datasheet
mtnn8452kq8.pdf
Spec. No. C559Q8 Issued Date 2012.04.27 CYStech Electronics Corp. Revised Date 2012.04.30 Page No. 1/12 Asymmetric Dual N-Channel Enhancement Mode MOSFET FET1 FET 2 MTNN8452KQ8 BVDSS 30V 30V ID 8A 10.2A RDSON(TYP.)@VGS=10V 11m 11m RDSON(TYP.)@VGS=4.5V 18m 18m Description The MTNN8452KQ8 uses advanced trench technology to provide excellent R and low gate ch... See More ⇒
mtnn8451kq8.pdf
Spec. No. C558Q8 Issued Date 2012.04.28 CYStech Electronics Corp. Revised Date 2012.04.30 Page No. 1/12 Asymmetric Dual N-Channel Enhancement Mode MOSFET FET1 FET 2 MTNN8451KQ8 BVDSS 30V 30V ID 6.8A 10.2A RDSON(TYP.)@VGS=10V 15m 11m RDSON(TYP.)@VGS=4.5V 23m 18m Description The MTNN8451KQ8 uses advanced trench technology to provide excellent R and low gate ... See More ⇒
mtnn8453kq8.pdf
Spec. No. C560Q8 Issued Date 2012.04.30 CYStech Electronics Corp. Revised Date Page No. 1/12 Asymmetric Dual N-Channel Enhancement Mode MOSFET FET1 FET 2 MTNN8453KQ8 BVDSS 30V 30V ID 6.8A 8.9A RDSON(TYP.)@VGS=10V 15m 15m RDSON(TYP.)@VGS=4.5V 23m 23m Description The MTNN8453KQ8 uses advanced trench technology to provide excellent R and low gate charge. DS... See More ⇒
Detailed specifications: MTNK3Y3, MTNK5C3, MTNK5N3, MTNK5S3, MTNK7S3, MTNN18N03Q8, MTNN20N03Q8, MTNN8451KQ8, AON7403, MTNN8453KQ8, MTP1013C3, MTP1013S3, MTP1067C6, MTP1406J3, MTP1406L3, MTP1406M3, MTP162M3
Keywords - MTNN8452KQ8 MOSFET specs
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