MTP4060J3 MOSFET Datasheet: P-Ch, 100V, 27A. Full specification with pinout and replacement list

MTP4060J3 Specs and Replacement

Type Designator: MTP4060J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 234 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO-252

MTP4060J3 substitution

- MOSFET ⓘ Cross-Reference Search

MTP4060J3 datasheet

..1. Size:319K cystek
mtp4060j3.pdf pdf_icon

Spec. No. C563J3 Issued Date 2012.01.16 CYStech Electronics Corp. Revised Date 2012.10.11 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTP4060J3 ID -27A 36m (typ.) RDSON@VGS=-10V, ID=-20A 41m (typ.) Features RDSON@VGS=-4.5V, ID=-18A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag... See More ⇒

9.1. Size:160K motorola
mtp40n10erev1.pdf pdf_icon

... See More ⇒

9.2. Size:165K motorola
mtp40n10e.pdf pdf_icon

... See More ⇒

9.3. Size:257K cystek
mtp405j3.pdf pdf_icon

Spec. No. C386J3 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP405J3 ID -18A RDS(ON)@VGS=-10V, ID=-18A 21m (typ) RDS(ON)@VGS=-4.5V, ID=-10A 33m (typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead platin... See More ⇒