MTP4151N3 Specs and Replacement

Type Designator: MTP4151N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.83 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT-23

MTP4151N3 substitution

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MTP4151N3 datasheet

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MTP4151N3

Spec. No. C565N3 Issued Date 2012.07.27 CYStech Electronics Corp. Revised Date Page No. 1/ 8 -20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP4151N3 ID -830mA RDSON@VGS=-4.5V, ID=-350mA 0.3 (typ) RDSON@VGS=-2.5V, ID=-300mA 0.46 (typ) RDSON@VGS=-1.8V, ID=-150mA 0.67 (typ) Features Very low level gate drive requirements allowing direct operation in 3V circ... See More ⇒

Detailed specifications: MTP3J15N3, MTP3J15Y3, MTP3LP01N3, MTP3LP01S3, MTP3LP01Y3, MTP405CJ3, MTP405J3, MTP4060J3, AON7408, MTP4403Q8, MTP4403SQ8, MTP4409H8, MTP4409Q8, MTP4411AQ8, MTP4411M3, MTP4411Q8, MTP4413Q8

Keywords - MTP4151N3 MOSFET specs

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