MTP5103N3 Specs and Replacement

Type Designator: MTP5103N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOT-23

MTP5103N3 substitution

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MTP5103N3 datasheet

 ..1. Size:359K  cystek
 mtp5103n3.pdf pdf_icon

MTP5103N3

Spec. No. C400N3 CYStech Electronics Corp. Issued Date 2011.11.28 Revised Date 2017.06.23 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -30V ID @TA=25 C , VGS=-10V -4.5A MTP5103N3 41m VGS=-10V, ID=-4.5A RDSON(TYP) 60m VGS=-4.5V, ID=-3.5A Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technolog... See More ⇒

 7.1. Size:302K  cystek
 mtp5103j3.pdf pdf_icon

MTP5103N3

Spec. No. C400J3 Issued Date 2012.02.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP5103J3 ID -23A 35m (typ.) RDSON@VGS=-10V, ID=-10A 57m (typ.) Features RDSON@VGS=-4.5V, ID=-5A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package ... See More ⇒

Detailed specifications: MTP4463Q8, MTP452L3, MTP452M3, MTP4835AQ8, MTP4835L3, MTP4835Q8, MTP4835V8, MTP5103J3, IRFB3607, MTP5210F3, MTP5614N6, MTP6405N6, MTP658G6, MTP7425Q8, MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8

Keywords - MTP5103N3 MOSFET specs

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