MTP5614N6 Specs and Replacement

Type Designator: MTP5614N6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT-26

MTP5614N6 substitution

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MTP5614N6 datasheet

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MTP5614N6

Spec. No. C733N6 Issued Date 2013.08.12 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -60V ID -3.5A MTP5614N6 RDSON@VGS=-10V, ID=-3A 72m (typ.) RDSON@VGS=-4.5V, ID=-2.7A 98m (typ.) Description The MTP5614N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s... See More ⇒

Detailed specifications: MTP452M3, MTP4835AQ8, MTP4835L3, MTP4835Q8, MTP4835V8, MTP5103J3, MTP5103N3, MTP5210F3, IRF530, MTP6405N6, MTP658G6, MTP7425Q8, MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3, MTP9435Q8

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