All MOSFET. MTP5614N6 Datasheet

 

MTP5614N6 Datasheet and Replacement


   Type Designator: MTP5614N6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOT-26
 

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MTP5614N6 Datasheet (PDF)

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MTP5614N6

Spec. No. : C733N6 Issued Date : 2013.08.12 CYStech Electronics Corp.Revised Date : 2013.09.06 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -60VID -3.5AMTP5614N6 RDSON@VGS=-10V, ID=-3A 72m(typ.) RDSON@VGS=-4.5V, ID=-2.7A 98m(typ.) Description The MTP5614N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

Datasheet: MTP452M3 , MTP4835AQ8 , MTP4835L3 , MTP4835Q8 , MTP4835V8 , MTP5103J3 , MTP5103N3 , MTP5210F3 , STP80NF70 , MTP6405N6 , MTP658G6 , MTP7425Q8 , MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 .

History: MTP5103N3 | CED83A3 | FQNL1N50BBU | FDFMA2P853 | IPN80R2K4P7 | AOT404 | IPD90N06S4L-03

Keywords - MTP5614N6 MOSFET datasheet

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