MTP6405N6 Specs and Replacement

Type Designator: MTP6405N6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOT-26

MTP6405N6 substitution

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MTP6405N6 datasheet

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MTP6405N6

Spec. No. C386N6 Issued Date 2013.08.19 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP6405N6 ID -6.5A 24m (typ.) RDSON(MAX)@VGS=-10V, ID=-5A 34m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-4A Description The MTP6405N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combi... See More ⇒

Detailed specifications: MTP4835AQ8, MTP4835L3, MTP4835Q8, MTP4835V8, MTP5103J3, MTP5103N3, MTP5210F3, MTP5614N6, CS150N03A8, MTP658G6, MTP7425Q8, MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3, MTP9435Q8, MTP9575J3

Keywords - MTP6405N6 MOSFET specs

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