MTP658G6 Specs and Replacement

Type Designator: MTP658G6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TSOP-6

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MTP658G6 datasheet

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MTP658G6

Spec. No. C400G6 Issued Date 2012.12.20 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -30V ID -5.2A MTP658G6 RDSON@VGS=-10V, ID=-5A 39m (typ.) RDSON@VGS=-4.5V, ID=-3.7A 61m (typ.) RDSON@VGS=-4V, ID=-3A 69m (typ.) RDSON@VGS=-3V, ID=-1.5A 116m (typ.) Description The MTP658G6 is a P-channel enhancement-mode MOSFET... See More ⇒

Detailed specifications: MTP4835L3, MTP4835Q8, MTP4835V8, MTP5103J3, MTP5103N3, MTP5210F3, MTP5614N6, MTP6405N6, NCEP15T14, MTP7425Q8, MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3, MTP9435Q8, MTP9575J3, MTP9575L3

Keywords - MTP658G6 MOSFET specs

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