All MOSFET. MTP658G6 Datasheet

 

MTP658G6 Datasheet and Replacement


   Type Designator: MTP658G6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TSOP-6
 

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MTP658G6 Datasheet (PDF)

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MTP658G6

Spec. No. : C400G6 Issued Date : 2012.12.20 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -30VID -5.2AMTP658G6 RDSON@VGS=-10V, ID=-5A 39m(typ.) RDSON@VGS=-4.5V, ID=-3.7A 61m(typ.) RDSON@VGS=-4V, ID=-3A 69m(typ.) RDSON@VGS=-3V, ID=-1.5A 116m(typ.) Description The MTP658G6 is a P-channel enhancement-mode MOSFET

Datasheet: MTP4835L3 , MTP4835Q8 , MTP4835V8 , MTP5103J3 , MTP5103N3 , MTP5210F3 , MTP5614N6 , MTP6405N6 , IRFP450 , MTP7425Q8 , MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 , MTP9575J3 , MTP9575L3 .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - MTP658G6 MOSFET datasheet

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