All MOSFET. MTP9006E3 Datasheet

 

MTP9006E3 Datasheet and Replacement


   Type Designator: MTP9006E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
   Package: TO-220AB
 

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MTP9006E3 Datasheet (PDF)

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MTP9006E3

Spec. No. : C733E3 Issued Date : 2010.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTP9006E3 ID -10A95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 GGate DDrain SSource

Datasheet: MTP4835V8 , MTP5103J3 , MTP5103N3 , MTP5210F3 , MTP5614N6 , MTP6405N6 , MTP658G6 , MTP7425Q8 , 20N50 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 , MTP9575J3 , MTP9575L3 , MTP9575Q8 , MTP9620Q8 .

History: IPA045N10N3G | DMN2990UDJ

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