MTP9006E3 Specs and Replacement

Type Designator: MTP9006E3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm

Package: TO-220AB

MTP9006E3 substitution

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MTP9006E3 datasheet

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MTP9006E3

Spec. No. C733E3 Issued Date 2010.07.09 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP9006E3 ID -10A 95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 G Gate D Drain S Source... See More ⇒

Detailed specifications: MTP4835V8, MTP5103J3, MTP5103N3, MTP5210F3, MTP5614N6, MTP6405N6, MTP658G6, MTP7425Q8, STP80NF70, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3, MTP9435Q8, MTP9575J3, MTP9575L3, MTP9575Q8, MTP9620Q8

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