MTP9575J3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP9575J3
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
TO-252
MTP9575J3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP9575J3
Datasheet (PDF)
..1. Size:345K cystek
mtp9575j3.pdf 
Spec. No. : C404J3 Issued Date : 2008.09.19 CYStech Electronics Corp.Revised Date :2009.02.04 Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -60VID -15AMTP9575J3 RDSON 90m Features Single Drive Requirement Low On-resistance Fast switching Characteristic RoHS compliant package Symbol Outline TO-252 MTP9575J3GGate G D S D
7.1. Size:278K cystek
mtp9575l3.pdf
Spec. No. : C404L3 Issued Date : 2007.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-Channel Enhancement Mode Power MOSFET MTP9575L3 Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free package Symbol Outline SOT-223 MTP9575L3D S GGate D DDrain G SSource Absolute Maximum Ra
7.2. Size:372K cystek
mtp9575q8.pdf
Spec. No. : C404Q8 Issued Date : 2008.02.04 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9575Q8 Description The MTP9575Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack
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