MTP9575J3 Datasheet. Specs and Replacement

Type Designator: MTP9575J3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO-252

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MTP9575J3 datasheet

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 mtp9575j3.pdf pdf_icon

MTP9575J3

Spec. No. C404J3 Issued Date 2008.09.19 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -60V ID -15A MTP9575J3 RDSON 90m Features Single Drive Requirement Low On-resistance Fast switching Characteristic RoHS compliant package Symbol Outline TO-252 MTP9575J3 G Gate G D S D... See More ⇒

 7.1. Size:278K  cystek
 mtp9575l3.pdf pdf_icon

MTP9575J3

Spec. No. C404L3 Issued Date 2007.06.22 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Enhancement Mode Power MOSFET MTP9575L3 Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free package Symbol Outline SOT-223 MTP9575L3 D S G Gate D D Drain G S Source Absolute Maximum Ra... See More ⇒

 7.2. Size:372K  cystek
 mtp9575q8.pdf pdf_icon

MTP9575J3

Spec. No. C404Q8 Issued Date 2008.02.04 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9575Q8 Description The MTP9575Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack... See More ⇒

Detailed specifications: MTP6405N6, MTP658G6, MTP7425Q8, MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3, MTP9435Q8, IRFP250, MTP9575L3, MTP9575Q8, MTP9620Q8, MTP9620V8, MTS3572G6, AO3160, AO3162, AO3400A

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