MTP9575J3 Spec and Replacement
Type Designator: MTP9575J3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-252
MTP9575J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP9575J3 Specs
mtp9575j3.pdf
Spec. No. C404J3 Issued Date 2008.09.19 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -60V ID -15A MTP9575J3 RDSON 90m Features Single Drive Requirement Low On-resistance Fast switching Characteristic RoHS compliant package Symbol Outline TO-252 MTP9575J3 G Gate G D S D... See More ⇒
mtp9575l3.pdf
Spec. No. C404L3 Issued Date 2007.06.22 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Enhancement Mode Power MOSFET MTP9575L3 Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free package Symbol Outline SOT-223 MTP9575L3 D S G Gate D D Drain G S Source Absolute Maximum Ra... See More ⇒
mtp9575q8.pdf
Spec. No. C404Q8 Issued Date 2008.02.04 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9575Q8 Description The MTP9575Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack... See More ⇒
Detailed specifications: MTP6405N6 , MTP658G6 , MTP7425Q8 , MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 , 4N60 , MTP9575L3 , MTP9575Q8 , MTP9620Q8 , MTP9620V8 , MTS3572G6 , AO3160 , AO3162 , AO3400A .
History: AP4455GYT | ZVN4306AVSTOB
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History: AP4455GYT | ZVN4306AVSTOB
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