MTP9575J3 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP9575J3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 36 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm
Package: TO-252
MTP9575J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP9575J3 Datasheet (PDF)
1.1. mtp9575j3.pdf 
Size:345K _cystek
Spec. No. : C404J3 Issued Date : 2008.09.19 CYStech Electronics Corp. Revised Date :2009.02.04 Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -60V ID -15A MTP9575J3 RDSON 90mΩ Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • RoHS compliant package Symbol Outline TO-252 MTP9575J3 G：Gate G D S D
3.1. mtp9575q8.pdf Size:372K _cystek
Spec. No. : C404Q8 Issued Date : 2008.02.04 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9575Q8 Description The MTP9575Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack
3.2. mtp9575l3.pdf Size:278K _cystek
Spec. No. : C404L3 Issued Date : 2007.06.22 CYStech Electronics Corp. Revised Date : Page No. : 1/6 P-Channel Enhancement Mode Power MOSFET MTP9575L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free package Symbol Outline SOT-223 MTP9575L3 D S G：Gate D D：Drain G S：Source Absolute Maximum Ra
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
