All MOSFET. MTP9575J3 Datasheet

 

MTP9575J3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTP9575J3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 36 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: TO-252

MTP9575J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP9575J3 Datasheet (PDF)

1.1. mtp9575j3.pdf Size:345K _cystek

MTP9575J3
MTP9575J3

Spec. No. : C404J3 Issued Date : 2008.09.19 CYStech Electronics Corp. Revised Date :2009.02.04 Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -60V ID -15A MTP9575J3 RDSON 90mΩ Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • RoHS compliant package Symbol Outline TO-252 MTP9575J3 G:Gate G D S D

3.1. mtp9575l3.pdf Size:278K _cystek

MTP9575J3
MTP9575J3

Spec. No. : C404L3 Issued Date : 2007.06.22 CYStech Electronics Corp. Revised Date : Page No. : 1/6 P-Channel Enhancement Mode Power MOSFET MTP9575L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free package Symbol Outline SOT-223 MTP9575L3 D S G:Gate D D:Drain G S:Source Absolute Maximum Ra

3.2. mtp9575q8.pdf Size:372K _cystek

MTP9575J3
MTP9575J3

Spec. No. : C404Q8 Issued Date : 2008.02.04 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9575Q8 Description The MTP9575Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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