MTP9620Q8 Specs and Replacement

Type Designator: MTP9620Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 264 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP-8

MTP9620Q8 substitution

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MTP9620Q8 datasheet

 ..1. Size:304K  cystek
 mtp9620q8.pdf pdf_icon

MTP9620Q8

Spec. No. C573Q8 Issued Date 2012.06.11 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP9620Q8 ID -10A RDSON@VGS=-4.5V, ID=-9.5A 20m (typ) RDSON@VGS=-2.5V,ID=-6A 26m (typ) RDSON@VGS=-1.8V,ID=-2A 35m (typ) Description The MTP9620Q8 is a P-channel enhancement-mode MOSFET, providing the designer wi... See More ⇒

 7.1. Size:381K  cystek
 mtp9620v8.pdf pdf_icon

MTP9620Q8

Spec. No. C573V8 Issued Date 2013.02.01 CYStech Electronics Corp. Revised Date 2014.04.29 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20V MTP9620V8 ID -32A RDSON@VGS=-4.5V, ID=-9.5A 20m (typ) RDSON@VGS=-2.5V,ID=-6A 26m (typ) RDSON@VGS=-1.8V,ID=-2A 35m (typ) Features RDSON@VGS=-1.5V,ID=-1A 38m (typ) Simple drive requirement Low on-resis... See More ⇒

Detailed specifications: MTP9006E3, MTP9435BDYAQ8, MTP9435BDYQ8, MTP9435L3, MTP9435Q8, MTP9575J3, MTP9575L3, MTP9575Q8, 2SK3568, MTP9620V8, MTS3572G6, AO3160, AO3162, AO3400A, AO3402, AO3403, AO3404

Keywords - MTP9620Q8 MOSFET specs

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