All MOSFET. MTP9620Q8 Datasheet

 

MTP9620Q8 Datasheet and Replacement


   Type Designator: MTP9620Q8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
 

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MTP9620Q8 Datasheet (PDF)

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MTP9620Q8

Spec. No. : C573Q8 Issued Date : 2012.06.11 CYStech Electronics Corp.Revised Date : 2012.06.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20VMTP9620Q8 ID -10ARDSON@VGS=-4.5V, ID=-9.5A 20m(typ)RDSON@VGS=-2.5V,ID=-6A 26m(typ)RDSON@VGS=-1.8V,ID=-2A 35m(typ)Description The MTP9620Q8 is a P-channel enhancement-mode MOSFET, providing the designer wi

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MTP9620Q8

Spec. No. : C573V8 Issued Date : 2013.02.01 CYStech Electronics Corp.Revised Date : 2014.04.29 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20VMTP9620V8 ID -32ARDSON@VGS=-4.5V, ID=-9.5A 20m(typ)RDSON@VGS=-2.5V,ID=-6A 26m(typ)RDSON@VGS=-1.8V,ID=-2A 35m(typ)Features RDSON@VGS=-1.5V,ID=-1A 38m(typ) Simple drive requirement Low on-resis

Datasheet: MTP9006E3 , MTP9435BDYAQ8 , MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 , MTP9575J3 , MTP9575L3 , MTP9575Q8 , 5N65 , MTP9620V8 , MTS3572G6 , AO3160 , AO3162 , AO3400A , AO3402 , AO3403 , AO3404 .

History: CTLM8110-M832D | HSS2306A

Keywords - MTP9620Q8 MOSFET datasheet

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