MTS3572G6 Datasheet and Replacement

   Type Designator: MTS3572G6
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60(20) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
   |Id|ⓘ - Maximum Drain Current: 0.3(4.3) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.1(12) nS
   Cossⓘ - Output Capacitance: 5.5(103) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5(0.052) Ohm
   Package: TSOP-6
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