MTS3572G6 Specs and Replacement

Type Designator: MTS3572G6

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60(20) V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V

|Id| ⓘ - Maximum Drain Current: 0.3(4.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.1(12) nS

Cossⓘ - Output Capacitance: 5.5(103) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5(0.052) Ohm

Package: TSOP-6

MTS3572G6 substitution

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MTS3572G6 datasheet

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MTS3572G6

Spec. No. C778G6 Issued Date 2012.02.10 CYStech Electronics Corp. Revised Date 2014.07.11 Page No. 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTS3572G6 Description The MTS3572G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device desig... See More ⇒

Detailed specifications: MTP9435BDYQ8, MTP9435L3, MTP9435Q8, MTP9575J3, MTP9575L3, MTP9575Q8, MTP9620Q8, MTP9620V8, 5N60, AO3160, AO3162, AO3400A, AO3402, AO3403, AO3404, AO3404A, AO3406

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.