All MOSFET. MTS3572G6 Datasheet

 

MTS3572G6 Datasheet and Replacement


   Type Designator: MTS3572G6
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60(20) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
   |Id| ⓘ - Maximum Drain Current: 0.3(4.3) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.1(12) nS
   Cossⓘ - Output Capacitance: 5.5(103) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5(0.052) Ohm
   Package: TSOP-6
 

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MTS3572G6 Datasheet (PDF)

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MTS3572G6

Spec. No. : C778G6 Issued Date : 2012.02.10 CYStech Electronics Corp.Revised Date : 2014.07.11 Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTS3572G6 Description The MTS3572G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device desig

Datasheet: MTP9435BDYQ8 , MTP9435L3 , MTP9435Q8 , MTP9575J3 , MTP9575L3 , MTP9575Q8 , MTP9620Q8 , MTP9620V8 , 13N50 , AO3160 , AO3162 , AO3400A , AO3402 , AO3403 , AO3404 , AO3404A , AO3406 .

History: SI4622DY | VBZL80N03

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