AO3421E
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3421E
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.2
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 46.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
SOT23
AO3421E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3421E
Datasheet (PDF)
..1. Size:309K aosemi
ao3421e.pdf 
AO3421E30V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO3421E combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -3Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
..2. Size:1703K kexin
ao3421e.pdf
SMD Type MOSFETP-Channel MOSFETAO3421E (KO3421E)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-3 A (VGS =-10V)1 2 RDS(ON) 95m (VGS =-10V)+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 160m (VGS =-4.5V) +0.11.9-0.11. GateD 2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
..3. Size:866K cn vbsemi
ao3421e.pdf
AO3421Ewww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)
0.1. Size:1856K kexin
ao3421e-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3421E (KO3421E)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-3 A (VGS =-10V)1 2 RDS(ON) 95m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 160m (VGS =-4.5V)1. GateD 2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol R
8.1. Size:234K aosemi
ao3421.pdf
AO342130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3421 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
8.2. Size:1179K kexin
ao3421-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3421 (KO3421)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-2.6 A (VGS =-10V)1 2 RDS(ON) 110m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 180m (VGS =-4.5V) 1.9 -0.2D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol
8.3. Size:1030K kexin
ao3421.pdf
SMD Type MOSFETP-Channel MOSFETAO3421 (KO3421)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 110m (VGS =-10V) 1 2+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 180m (VGS =-4.5V)+0.11.9 -0.1D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
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