All MOSFET. AO3460 Datasheet

 

AO3460 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO3460

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.7 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.8 nS

Drain-Source Capacitance (Cd): 6 pF

Maximum Drain-Source On-State Resistance (Rds): 1.7 Ohm

Package: SOT23-3

AO3460 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO3460 Datasheet (PDF)

1.1. ao3460.pdf Size:195K _aosemi

AO3460
AO3460

AO3460 60V N-Channel MOSFET General Description Product Summary The AO3460 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, and ID = 0.65A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON) < 1.7Ω (VGS = 10V) small SOT-23 footprint. It can be used for a wide RDS(ON) < 2Ω (VGS = 4.5V) variety of applications, includi

1.2. ao3460.pdf Size:1442K _kexin

AO3460
AO3460

SMD Type MOSFET N-Channel MOSFET AO3460 (KO3460) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) 1 2 ● RDS(ON) < 1.7Ω (VGS = 10V) +0.1 +0.05 0.95 -0.1 0.1-0.01 ● RDS(ON) < 2Ω (VGS = 4.5V) +0.1 1.9-0.1 1. Gate D 2. Source 3. Drain G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ratin

 1.3. ao3460-3.pdf Size:1587K _kexin

AO3460
AO3460

SMD Type MOSFET N-Channel MOSFET AO3460 (KO3460) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) 1 2 ● RDS(ON) < 1.7Ω (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 ● RDS(ON) < 2Ω (VGS = 4.5V) 1.9-0.2 1. Gate 2. Source D 3. Drain G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

Datasheet: AO3422 , AO3423 , AO3424 , AO3434 , AO3434A , AO3435 , AO3438 , AO3442 , IRF630A , AO4202 , AO4240 , AO4260 , AO4264 , AO4266 , AO4286 , AO4292 , AO4302 .

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