All MOSFET. AO3460 Datasheet

 

AO3460 Datasheet and Replacement


   Type Designator: AO3460
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SOT23
 

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AO3460 Datasheet (PDF)

 ..1. Size:195K  aosemi
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AO3460

AO346060V N-Channel MOSFETGeneral Description Product SummaryThe AO3460 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON), low gate charge, and ID = 0.65A (VGS = 10V)operation with gate voltages as low as 4.5V, in the RDS(ON)

 ..2. Size:1442K  kexin
ao3460.pdf pdf_icon

AO3460

SMD Type MOSFETN-Channel MOSFETAO3460 (KO3460)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 60V ID = 0.65 A (VGS = 10V)1 2 RDS(ON) 1.7 (VGS = 10V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 2 (VGS = 4.5V) +0.11.9-0.11. GateD2. Source3. DrainG SS Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 0.1. Size:1587K  kexin
ao3460-3.pdf pdf_icon

AO3460

SMD Type MOSFETN-Channel MOSFETAO3460 (KO3460)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 0.65 A (VGS = 10V)1 2 RDS(ON) 1.7 (VGS = 10V)+0.02+0.10.15 -0.020.95-0.1+0.1 RDS(ON) 2 (VGS = 4.5V) 1.9-0.21. Gate2. SourceD3. DrainG SS Absolute Maximum Ratings Ta = 25Parameter Symbol

Datasheet: AO3422 , AO3423 , AO3424 , AO3434 , AO3434A , AO3435 , AO3438 , AO3442 , 2N7002 , AO4202 , AO4240 , AO4260 , AO4264 , AO4266 , AO4286 , AO4292 , AO4302 .

History: IXFH7N100P | 10N40 | NCE8205 | FCD5N60TMWS

Keywords - AO3460 MOSFET datasheet

 AO3460 cross reference
 AO3460 equivalent finder
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 AO3460 substitution
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