AO3460 Specs and Replacement

Type Designator: AO3460

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: SOT23

AO3460 substitution

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AO3460 datasheet

 ..1. Size:195K  aosemi
 ao3460.pdf pdf_icon

AO3460

AO3460 60V N-Channel MOSFET General Description Product Summary The AO3460 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, and ID = 0.65A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON) ... See More ⇒

 ..2. Size:1442K  kexin
 ao3460.pdf pdf_icon

AO3460

SMD Type MOSFET N-Channel MOSFET AO3460 (KO3460) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) = 60V ID = 0.65 A (VGS = 10V) 1 2 RDS(ON) 1.7 (VGS = 10V) +0.1 +0.05 0.95 -0.1 0.1-0.01 RDS(ON) 2 (VGS = 4.5V) +0.1 1.9-0.1 1. Gate D 2. Source 3. Drain G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒

 0.1. Size:1587K  kexin
 ao3460-3.pdf pdf_icon

AO3460

SMD Type MOSFET N-Channel MOSFET AO3460 (KO3460) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 0.65 A (VGS = 10V) 1 2 RDS(ON) 1.7 (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 RDS(ON) 2 (VGS = 4.5V) 1.9-0.2 1. Gate 2. Source D 3. Drain G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol ... See More ⇒

Detailed specifications: AO3422, AO3423, AO3424, AO3434, AO3434A, AO3435, AO3438, AO3442, MMIS60R580P, AO4202, AO4240, AO4260, AO4264, AO4266, AO4286, AO4292, AO4302

Keywords - AO3460 MOSFET specs

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