AO4286 Datasheet and Replacement
Type Designator: AO4286
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: SO-8
AO4286 substitution
AO4286 Datasheet (PDF)
ao4286.pdf
AO4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4286 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 4Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
ao4286.pdf
SMD Type MOSFETN-Channel MOSFETAO4286 (KO4286)SOP-8 Features VDS (V) = 100V ID = 4 A (VGS = 10V)1.50 0.15 RDS(ON) 68m (VGS = 10V) RDS(ON) 92m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Ga
Datasheet: AO3438 , AO3442 , AO3460 , AO4202 , AO4240 , AO4260 , AO4264 , AO4266 , IRF730 , AO4292 , AO4302 , AO4304 , AO4310 , AO4312 , AO4314 , AO4354 , AO4402 .
Keywords - AO4286 MOSFET datasheet
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History: FXN0808C | FTK6N70D
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