All MOSFET. AO4286 Datasheet

 

AO4286 Datasheet and Replacement


   Type Designator: AO4286
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SO-8
 

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AO4286 Datasheet (PDF)

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AO4286

AO4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4286 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 4Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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AO4286

SMD Type MOSFETN-Channel MOSFETAO4286 (KO4286)SOP-8 Features VDS (V) = 100V ID = 4 A (VGS = 10V)1.50 0.15 RDS(ON) 68m (VGS = 10V) RDS(ON) 92m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Ga

Datasheet: AO3438 , AO3442 , AO3460 , AO4202 , AO4240 , AO4260 , AO4264 , AO4266 , IRFP064N , AO4292 , AO4302 , AO4304 , AO4310 , AO4312 , AO4314 , AO4354 , AO4402 .

History: NCE80T900 | STB27NM60ND | BRCS120N03YA | IPG20N10S4L-22 | HFS10N65U | SPC4527 | PSMN5R0-80PS

Keywords - AO4286 MOSFET datasheet

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