FSL923AOD
MOSFET. Datasheet pdf. Equivalent
Type Designator: FSL923AOD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.67
Ohm
Package:
TO205AF
FSL923AOD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSL923AOD
Datasheet (PDF)
6.1. Size:47K harris semi
fsl923ao.pdf 
FSL923AOD,S E M I C O N D U C T O RFSL923AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 5A, -200V, rDS(ON) = 0.670 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military space- Meets Pre-RAD Specifications
8.1. Size:54K intersil
fsl9230.pdf
FSL9230D,FSL9230R3A, -200V, 1.50 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 3A, -200V, rDS(ON) = 1.50 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD
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, FSL9110R
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