All MOSFET. AO4771 Datasheet

 

AO4771 Datasheet and Replacement


   Type Designator: AO4771
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SO-8
 

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AO4771 Datasheet (PDF)

 ..1. Size:292K  aosemi
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AO4771

AO477130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VAO4771 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. A Schottky diode is ID (at VGS=-10V) -4Aprovided to facilitate the implementation of a bidirectional RDS(ON) (at VGS=-10V)

 ..2. Size:2239K  kexin
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AO4771

SMD Type MOSFETP-Channel MOSFETAO4771 (KO4771)SOP-8 Unit:mm Features VDS (V) = -30V ID = -4 A (VGS = -10V) 1.50 0.15 RDS(ON) 68m (VGS = -10V) RDS(ON) 105m (VGS = -4.5V)1 A 5 D2 A 6 D VDS (V) = 30V, IF = 4A, VF

 9.1. Size:289K  aosemi
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AO4771

AO477230V N-Channel MOSFETGeneral Description Product SummaryVDS30VAO4772 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. A Schottky diode is ID (at VGS=10V) 6Aprovided to facilitate the implementation of a bidirectional RDS(ON) (at VGS=10V)

Datasheet: AO4706 , AO4710 , AO4712 , AO4714 , AO4718 , AO4720 , AO4724 , AO4752 , STP65NF06 , AO4800 , AO4800B , AO4801 , AO4801A , AO4803 , AO4803A , AO4805 , AO4806 .

History: PHD82NQ03LT | 2SK1446 | BSC084P03NS3G | BUK9624-55A | SVF2N60CNF

Keywords - AO4771 MOSFET datasheet

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