AO4771 Specs and Replacement

Type Designator: AO4771

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SO-8

AO4771 substitution

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AO4771 datasheet

 ..1. Size:292K  aosemi
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AO4771

AO4771 30V P-Channel MOSFET General Description Product Summary VDS -30V AO4771 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is ID (at VGS=-10V) -4A provided to facilitate the implementation of a bidirectional RDS(ON) (at VGS=-10V) ... See More ⇒

 ..2. Size:2239K  kexin
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AO4771

SMD Type MOSFET P-Channel MOSFET AO4771 (KO4771) SOP-8 Unit mm Features VDS (V) = -30V ID = -4 A (VGS = -10V) 1.50 0.15 RDS(ON) 68m (VGS = -10V) RDS(ON) 105m (VGS = -4.5V) 1 A 5 D 2 A 6 D VDS (V) = 30V, IF = 4A, VF... See More ⇒

 9.1. Size:289K  aosemi
 ao4772.pdf pdf_icon

AO4771

AO4772 30V N-Channel MOSFET General Description Product Summary VDS 30V AO4772 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is ID (at VGS=10V) 6A provided to facilitate the implementation of a bidirectional RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AO4706, AO4710, AO4712, AO4714, AO4718, AO4720, AO4724, AO4752, IRFZ46N, AO4800, AO4800B, AO4801, AO4801A, AO4803, AO4803A, AO4805, AO4806

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