AO4862 Specs and Replacement

Type Designator: AO4862

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.5 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO-8

AO4862 substitution

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AO4862 datasheet

 ..1. Size:403K  aosemi
 ao4862.pdf pdf_icon

AO4862

AO4862 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:986K  kexin
 ao4862.pdf pdf_icon

AO4862

SMD Type MOSFET Dual N-Channel MOSFET AO4862 (KO4862) SOP-8 Unit mm Features VDS (V) = 30V 1.50 0.15 ID = 4.5A (VGS = 10V) RDS(ON) 50m (VGS = 10V) 1 S2 5 D1 RDS(ON) 68m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 G1 G2 D1 D2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-... See More ⇒

 0.1. Size:334K  aosemi
 ao4862e.pdf pdf_icon

AO4862

AO4862E 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AO4830, AO4832, AO4838, AO4840, AO4842, AO4850, AO4852, AO4854, IRFB4110, AO4882, AO4884, AO4886, AO4892, AO4914, AO4922, AO4924, AO4932

Keywords - AO4862 MOSFET specs

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